Releases e Notícias
Setembro de 2011Nova linha de drivers de 1200V da International Rectifier reduz perdas por chaveamento em alta velocidade
IR’s Reliable, Ultra-fast 1200 V IGBTs Significantly Reduce Switching and Conduction Losses to Deliver Higher Overall System Efficiency
IR has announced the introduction of a family of reliable, efficient 1200 V Insulated Gate Bipolar Transistors (IGBTs) for induction heating, uninterruptible power supplies (UPS) solar and welding applications.
The new family of ultra-fast 1200 V IGBTs utilizes thin wafer Field-Stop Trench technology that significantly reduces switching and conduction losses to deliver higher power density and greater efficiency at higher frequencies. These devices are further optimized for applications that do not require short-circuit capability such as UPS, solar inverters, and welding, and complement IR’s products with 10 microsecond short circuit capability for motor drive applications.
Click here for more information.
